| PART |
Description |
Maker |
| ELEMD6R8JA ELEMD6R8KA ELEXH220KA ELEKN390JA ELEXHR |
1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR AXIAL LEADED
1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 27 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 560 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4700 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1800 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 270 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3900 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 680 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5600 uH, GENERAL PURPOSE INDUCTOR
|
Panasonic, Corp.
PANASONIC CORP
|
| BCW72LT1 BCW72LT1/D BCW72L BCW72LT1-D |
General Purpose Transistors NPN Silicon
Small Signal NPN
General Purpose Transistor NPN Silicon(硅NPN通用晶体
|
ON Semiconductor
|
| BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846BPDW1T |
Dual General Purpose Amplifier Transistors (NPN PNP)(-45V通用型双放大器晶体管(NPN PNP，SOT-363封装)) 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Dual General Purpose Transistors(NPN/PNP Duals)
|
ON Semiconductor
|
| CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
NPN SILICON PLANAR TRANSISTOR
|
Continental Device India Limited
|
| BC847A BC846B BC848CLT1 BC850CLT1G BC846ALT1 BC846 |
Small Signal Transistor MINI
Small Signal XST MINI
General Purpose Transistor NPN
Transistor SSP NPN
GENERAL PURPOSE TRANSISTORS(NPN SILICON)
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 高速CMOS逻辑可复位双重单稳态多谐振荡器 SOIC-16封装 工作温度55℃_125
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer 24-SOIC -55 to 125 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| BC550C BC550C_RR BC549 BC549C BC550 |
TRANSISTORSOT-54
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
NPN general purpose transistors 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
http://
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| P82-D-18C P82-D-8C P03-26 P03-20 P03-37 P03-23 P03 |
1 ELEMENT, 43000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 24000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2400 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 60 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
ITT Interconnect Solutions
|
| BC413B BC413C BC414B BC414C |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.010A Ic, 180 - 460 hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 380 - 800 hFE
|
Continental Device India Limited
|
| BC848CDXV6T5 BC847CDXV6T1 BC847CDXV6T5 BC848CDXV6T |
General Purpose NPN Transistor
Dual General Purpose Transistors
|
ONSEMI[ON Semiconductor]
|
| FTM3725 |
NPN General Purpose Amplifier
NPN Transistor 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE
0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
|
